Hydrodynamic simulation of RF noise in deep-submicron MOSFETs

被引：0

作者：

Oh, TY ^{[1
]}

Jungemann, C ^{[1
]}

Dutton, RW ^{[1
]}

机构：

[1] Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA

来源：

2003 IEEE INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES | 2003年

关键词：

hydodynamic; drain noise; gate noise; correlation coefficient; impedance field; local noise source;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A noise model for MOSFETs based on analytical microscopic noise sources has been developed and noise simulations based on the hydrodynamic model have been performed. The drain and gate excess noise parameters and correlation coefficient are extracted and the reasons for noise parameter dependence on the channel length are explained.

引用

页码：87 / 90

页数：4

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