Peculiarities of the temperature behavior of SOI MOSFETs in the deep submicron area

被引：0

作者：

Vancaillie, L ^{[1
]}

Kilchytska, V ^{[1
]}

Delatte, P ^{[1
]}

Demeûs, L ^{[1
]}

Matsuhashi, H ^{[1
]}

Ichikawa, F ^{[1
]}

Flandre, D ^{[1
]}

机构：

[1] Univ Catholique Louvain, Microelect Lab, Louvain, Belgium

来源：

2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2003年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：78 / 79

页数：2

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