Peculiarities of the temperature behavior of SOI MOSFETs in the deep submicron area

被引：0
|
作者：
Vancaillie, L [1 ]
Kilchytska, V [1 ]
Delatte, P [1 ]
Demeûs, L [1 ]
Matsuhashi, H [1 ]
Ichikawa, F [1 ]
Flandre, D [1 ]
机构：
[1] Univ Catholique Louvain, Microelect Lab, Louvain, Belgium
来源：
2003 IEEE INTERNATIONAL SOI CONFERENCE, PROCEEDINGS | 2003年
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D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：78 / 79
页数：2
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