A reliable lifetime prediction in deep submicron N-channel SOI MOSFETs

Hot carrier effects are thoroughly investigated in deep submiron N-channel SOI MOSFETs, for gate lengths from 0.4 mu m down to 0.1 mu m. The hot-carrier-induced device degradations are analyzed with systematic stress experiments in the maximum substrate current condition (Vg approximate to Vd/2), where the most severe device aging is observed in the low drain bias range. A two-stage hot-carrier degradation is clearly observed for all the experimental conditions. A quasi-identical threshold value between the power time-dependent law and the logarithmic time-dependent law is also highlighted for all the stress drain biases for a given channel length. These new findings allow us to propose a reliable method for lifetime prediction using accurate time-dependent laws in a wide gate length range.