Analog Behavior of Submicron Graded-Channel SOI MOSFETs Varying the Channel Length, Doping Concentration and Temperature

被引：0
|
作者：
Nemer, J. P. [1 ]
de Souza, M. [1 ]
Flandre, D. [2 ]
Pavanello, M. A. [1 ]
机构：
[1] Ctr Univ FEI, Dept Elect Engn, Sao Bernardo Do Campo, Brazil
[2] Catholic Univ Louvain, ICTEAM Inst, Dept Elect Engn, Louvain, Belgium
来源：
ADVANCED SEMICONDUCTOR-ON-INSULATOR TECHNOLOGY AND RELATED PHYSICS 16 | 2013年 / 53卷 / 05期
基金：
巴西圣保罗研究基金会;
关键词：
D O I：
10.1149/05305.0149ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
In this paper the analog performance of Graded-Channel (GC) SOI nMOSFETs with deep submicrometer channel length is presented. Experimental data of GC transistors fabricated in an industrial 150 nm fully-depleted SOI technology from OKI Semiconductors were used to adjust the two-dimensional numerical simulations, in order to analyze the devices analog behavior by extrapolating their physical parameters. The obtained results show that the larger intrinsic voltage gain improvement occurs when the length of the lightly doped region is approximately 100 nm regardless the total channel length, doping concentration and temperature.
引用
收藏
页码：149 / 154
页数：6
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