Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application

被引：5

作者：

Lee, Kitae ^{[1
,2
]}

Kim, Sihyun ^{[1
,2
]}

Lee, Jong-Ho ^{[1
,2
]}

Park, Byung-Gook ^{[1
,2
]}

Kwon, Daewoong ^{[3
]}

机构：

[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea

[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea

[3] Inha Univ, Dept Elect Engn, Incheon 22212, South Korea

来源：

IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2022年 / 10卷

基金：

新加坡国家研究基金会;

关键词：

Ferroelectric-gate field-effect transistor (FeFET); Ferroelectric devices; one transistor dynamic random-access memory (1T-DRAM); endurance characteristics of FeFET; recess channel; MEMORY; MECHANISMS;

D O I：

10.1109/JEDS.2021.3127955

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The ferroelectric-metal field-effect transistor with recessed channel (RC-FeMFET) is proposed for one transistor dynamic random-access memory (1T-DRAM). Through technology computer-aided design (TCAD) simulations, the effects of inter-metal insertion on the FeFET with recessed channel (RC-FeFET) is identified. By evaluating electric field (e-field) across interlayer (IL) and memory window (MW), the improvements of program/erase cycling endurance and read current sensing margin (RSM) are verified in the RC-FeMFET. Moreover, considering program voltage (V-W) and polarization switching time (tau(p)), the guide line of the RC-FeMFET design is provided in terms of e-field across IL and MW for 1T-DRAM applications.

引用

页码：13 / 18

页数：6

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