Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application

被引：5
|
作者：
Lee, Kitae [1 ,2 ]
Kim, Sihyun [1 ,2 ]
Lee, Jong-Ho [1 ,2 ]
Park, Byung-Gook [1 ,2 ]
Kwon, Daewoong [3 ]
机构：
[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea
[3] Inha Univ, Dept Elect Engn, Incheon 22212, South Korea
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2022年 / 10卷
基金：
新加坡国家研究基金会;
关键词：
Ferroelectric-gate field-effect transistor (FeFET); Ferroelectric devices; one transistor dynamic random-access memory (1T-DRAM); endurance characteristics of FeFET; recess channel; MEMORY; MECHANISMS;
D O I：
10.1109/JEDS.2021.3127955
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ferroelectric-metal field-effect transistor with recessed channel (RC-FeMFET) is proposed for one transistor dynamic random-access memory (1T-DRAM). Through technology computer-aided design (TCAD) simulations, the effects of inter-metal insertion on the FeFET with recessed channel (RC-FeFET) is identified. By evaluating electric field (e-field) across interlayer (IL) and memory window (MW), the improvements of program/erase cycling endurance and read current sensing margin (RSM) are verified in the RC-FeMFET. Moreover, considering program voltage (V-W) and polarization switching time (tau(p)), the guide line of the RC-FeMFET design is provided in terms of e-field across IL and MW for 1T-DRAM applications.
引用
收藏
页码：13 / 18
页数：6
相关论文
共 50 条
  • [11] Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel
    Schrott, AG
    Misewich, JA
    Nagarajan, V
    Ramesh, R
    [J]. APPLIED PHYSICS LETTERS, 2003, 82 (26) : 4770 - 4772
  • [12] Investigation on Temperature Dependency of Recessed-Channel Reconfigurable Field-Effect Transistor
    Kim, Jang Hyun
    Kim, Sangwan
    [J]. ELECTRONICS, 2019, 8 (10)
  • [13] Design of Superlattice Ferroelectric-Metal Field-effect Transistor for triple-level cell 3D NAND flash
    Woo, Sola
    Choe, Gihun
    Khan, Asif Islam
    Datta, Suman
    Yu, Shimeng
    [J]. Microelectronic Engineering, 2025, 295
  • [14] A Recessed-channel Tunnel Field-Effect Transistor (RTFET) with the Asymmetric Source and Drain
    Kwon, Hui Tae
    Kim, Sang Wan
    Lee, Won Joo
    Wee, Dae Hoon
    Kim, Yoon
    [J]. JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2016, 16 (05) : 635 - 640
  • [15] A ferroelectric semiconductor field-effect transistor
    Mengwei Si
    Atanu K. Saha
    Shengjie Gao
    Gang Qiu
    Jingkai Qin
    Yuqin Duan
    Jie Jian
    Chang Niu
    Haiyan Wang
    Wenzhuo Wu
    Sumeet K. Gupta
    Peide D. Ye
    [J]. Nature Electronics, 2019, 2 : 580 - 586
  • [16] A ferroelectric semiconductor field-effect transistor
    Si, Mengwei
    Saha, Atanu K.
    Gao, Shengjie
    Qiu, Gang
    Qin, Jingkai
    Duan, Yuqin
    Jian, Jie
    Niu, Chang
    Wang, Haiyan
    Wu, Wenzhuo
    Gupta, Sumeet K.
    Ye, Peide D.
    [J]. NATURE ELECTRONICS, 2019, 2 (12) : 580 - 586
  • [17] Thin film field-effect transistor with ZnO:Li ferroelectric channel
    Poghosyan, Armen
    Hovsepyan, Ruben
    Mnatsakanyan, Hrachya
    [J]. JOURNAL OF ADVANCED DIELECTRICS, 2024,
  • [18] FEDRAM: A Capacitor-less DRAM Based on Ferroelectric-Gated Field-Effect Transistor
    Ma, T. P.
    [J]. 2014 IEEE 6TH INTERNATIONAL MEMORY WORKSHOP (IMW), 2014,
  • [19] FEDRAM: A Capacitor-less DRAM Based on Ferroelectric-Gated Field-Effect Transistor
    Ma, T. P.
    [J]. 2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, VOLS 1-4, 2008, : 850 - 852
  • [20] Gateless 1T-DRAM on n-Channel Bulk FinFETs
    Andrade, M. G. C.
    Almeida, L. M.
    Martino, J. A.
    Aoulaiche, M.
    Simoen, E.
    Claeys, C.
    [J]. CHINA SEMICONDUCTOR TECHNOLOGY INTERNATIONAL CONFERENCE 2012 (CSTIC 2012), 2012, 44 (01): : 3 - 8
12345