Ferroelectric field-effect transistor with a SrRuxTi1-xO3 channel

被引：43
|
作者：
Schrott, AG
Misewich, JA
Nagarajan, V
Ramesh, R
机构：
[1] IBM Corp, Div Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
[2] Univ Maryland, College Pk, MD 20742 USA
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 26期
关键词：
D O I：
10.1063/1.1588753
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A ferroelectric field-effect transistor with a SrRuxTi1-xO3 solid-solution channel layer and a lead zirconate titanate gate oxide has been fabricated. The remnant polarization of the ferroelectric yields two states at 0 V, which produce a relative change in channel resistance (DeltaR/R) of 75% and a coercivity of 3 V. The channel has sufficient off-state free carrier concentration to provide sufficient balancing charge for ferroelectric stability. The device was subjected to more than 10(10) read-write cycles with no degradation. This nonvolatile device offers the possibility of a nondestructive, current sense memory cell with good retention properties. (C) 2003 American Institute of Physics.
引用
收藏
页码：4770 / 4772
页数：3
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