Ferroelectric-Metal Field-Effect Transistor With Recessed Channel for 1T-DRAM Application

被引：5
|
作者：
Lee, Kitae [1 ,2 ]
Kim, Sihyun [1 ,2 ]
Lee, Jong-Ho [1 ,2 ]
Park, Byung-Gook [1 ,2 ]
Kwon, Daewoong [3 ]
机构：
[1] Seoul Natl Univ, Dept Elect & Comp Engn, Seoul 08826, South Korea
[2] Seoul Natl Univ, Interuniv Semicond Res Ctr, Seoul 08826, South Korea
[3] Inha Univ, Dept Elect Engn, Incheon 22212, South Korea
来源：
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY | 2022年 / 10卷
基金：
新加坡国家研究基金会;
关键词：
Ferroelectric-gate field-effect transistor (FeFET); Ferroelectric devices; one transistor dynamic random-access memory (1T-DRAM); endurance characteristics of FeFET; recess channel; MEMORY; MECHANISMS;
D O I：
10.1109/JEDS.2021.3127955
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The ferroelectric-metal field-effect transistor with recessed channel (RC-FeMFET) is proposed for one transistor dynamic random-access memory (1T-DRAM). Through technology computer-aided design (TCAD) simulations, the effects of inter-metal insertion on the FeFET with recessed channel (RC-FeFET) is identified. By evaluating electric field (e-field) across interlayer (IL) and memory window (MW), the improvements of program/erase cycling endurance and read current sensing margin (RSM) are verified in the RC-FeMFET. Moreover, considering program voltage (V-W) and polarization switching time (tau(p)), the guide line of the RC-FeMFET design is provided in terms of e-field across IL and MW for 1T-DRAM applications.
引用
收藏
页码：13 / 18
页数：6
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