Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates

被引：54
|
作者：
Birkhahn, R [1 ]
Steckl, AJ [1 ]
机构：
[1] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 15期
关键词：
D O I：
10.1063/1.122404
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Visible light emission has been obtained from Er-doped alpha-GaN thin films grown on Si(111). The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N-2. Photoexcitation with a He-Cd laser resulted in strong green emission from two narrow green lines at 537 and 558 nm identified as Er transitions from the H-2(11/2) and S-4(3/2) levels to the I-4(15/2) ground state. X-ray diffraction shows the GaN:Er to be a wurtzitic single crystal film. The growth temperature is seen to have a strong effect on the GaN:Er surface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02641-2].
引用
收藏
页码：2143 / 2145
页数：3
相关论文
共 50 条
  • [31] 1.54 MU-M WAVELENGTH EMISSION OF HIGHLY ER-DOPED CAF2 LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    DARAN, E
    LEGROS, R
    MUNOZYAGUE, A
    FONTAINE, C
    BAUSA, LE
    [J]. JOURNAL OF APPLIED PHYSICS, 1994, 76 (01) : 270 - 273
  • [32] Magnesium-doped GaN films grown by molecular beam epitaxy on GaAs(111)B substrates
    Cheng, TS
    Foxon, CT
    Jeffs, NJ
    Dewsnip, DJ
    Flannery, LB
    Orton, JW
    Harrison, I
    Novikov, SV
    Ber, BY
    Kudriavtsev, YA
    [J]. SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2, 1998, 264-2 : 1217 - 1220
  • [33] Synthesis of GaN nanowires on Si (111) substrates by molecular beam epitaxy
    Bolshakov, A. D.
    Sapunov, G. A.
    Mozharov, A. M.
    Cirlin, G. E.
    Shtrom, I. V.
    Mukhin, I. S.
    [J]. 3RD INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2016), 2016, 741
  • [34] Wurtzite GaN nanocolumns grown on Si(001) by molecular beam epitaxy
    Cerutti, L.
    Ristic, J.
    Fernandez-Garrido, S.
    Calleja, E.
    Trampert, A.
    Ploog, K. H.
    Lazic, S.
    Calleja, J. M.
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (21)
  • [35] Wet etching of GaN grown by molecular beam epitaxy on Si(111)
    Palacios, T
    Calle, F
    Varela, M
    Ballesteros, C
    Monroy, E
    Naranjo, FB
    Sánchez-García, MA
    Calleja, E
    Muñoz, E
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2000, 15 (10) : 996 - 1000
  • [36] Thermal properties of GaN/Si heterostructures grown by molecular beam epitaxy
    Cervantes-Contreras, M
    Quezada-Maya, CA
    López-López, M
    de la Cruz, GG
    Tamura, M
    Yodo, T
    [J]. JOURNAL OF CRYSTAL GROWTH, 2005, 278 (1-4) : 415 - 420
  • [37] Polarized Emission from Single GaN Quantum Dots Grown by Molecular Beam Epitaxy
    Amloy, S.
    Yu, K. H.
    Karlsson, K. F.
    Farivar, R.
    Andersson, T. G.
    Holtz, P. O.
    [J]. PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399
  • [38] Er Doped GaN by gas source molecular beam epitaxy on GaN templates.
    Rousseau, N
    Briot, O
    Ribes, V
    Aulombard, RL
    [J]. NEW APPLICATIONS FOR WIDE-BANDGAP SEMICONDUCTORS, 2003, 764 : 239 - 244
  • [39] Raman studies on oxygen doped GaN grown by molecular beam epitaxy
    Papadimitriou, D
    Ptak, AJ
    Korakakis, D
    Giles, NC
    Myers, TH
    [J]. GAN AND RELATED ALLOYS-2001, 2002, 693 : 41 - 46
  • [40] Characterization of carbon doped GaN films grown by molecular beam epitaxy
    Shimizu, S
    Sonoda, S
    [J]. PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, 2000, 1 : 740 - 743
12345