Green emission from Er-doped GaN grown by molecular beam epitaxy on Si substrates

被引：54
|
作者：
Birkhahn, R [1 ]
Steckl, AJ [1 ]
机构：
[1] Univ Cincinnati, Nanoelect Lab, Cincinnati, OH 45221 USA
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 15期
关键词：
D O I：
10.1063/1.122404
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Visible light emission has been obtained from Er-doped alpha-GaN thin films grown on Si(111). The GaN was grown by molecular beam epitaxy using solid sources (for Ga and Er) and a plasma gas source for N-2. Photoexcitation with a He-Cd laser resulted in strong green emission from two narrow green lines at 537 and 558 nm identified as Er transitions from the H-2(11/2) and S-4(3/2) levels to the I-4(15/2) ground state. X-ray diffraction shows the GaN:Er to be a wurtzitic single crystal film. The growth temperature is seen to have a strong effect on the GaN:Er surface morphology. (C) 1998 American Institute of Physics. [S0003-6951(98)02641-2].
引用
收藏
页码：2143 / 2145
页数：3
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