1.54 MU-M WAVELENGTH EMISSION OF HIGHLY ER-DOPED CAF2 LAYERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：20

作者：

DARAN, E ^{[1
]}

LEGROS, R ^{[1
]}

MUNOZYAGUE, A ^{[1
]}

FONTAINE, C ^{[1
]}

BAUSA, LE ^{[1
]}

机构：

[1] UNIV AUTONOMA MADRID,DEPT FIS MAT C-IV,E-28049 MADRID,SPAIN

来源：

JOURNAL OF APPLIED PHYSICS | 1994年 / 76卷 / 01期

关键词：

D O I：

10.1063/1.357140

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CaF2:Er layers have been grown by molecular-beam epitaxy on (100)-oriented CaF2 substrates; the Er concentration ranges from 1% to 50% (mole fraction). The 1.54 mum emission observed under excitation around 800 nm was studied by photoluminescence. Up to 35% Er concentration the integrated emission increases monotonously, quenching appearing for higher doping levels. Photoluminescence results are discussed within the framework of previous studies of Er3+ emission in the near-infrared range (830-860 nm) in order to gain insight into the Er centers involved in the 1.54 mum emission.

引用

页码：270 / 273

页数：4

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