Er-doped GaN grown by molecular beam epitaxy

被引：0
|
作者：
Ng, HM [1 ]
机构：
[1] Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA
来源：
STATE-OF-THE-ART PROGRAM ON COMPOUND SEMICONDUCTORS XXXVI AND WIDE BANDGAP SEMICONDUCTORS FOR PHOTONIC AND ELECTRONIC DEVICES AND SENSORS II | 2002年 / 2002卷 / 03期
关键词：
D O I：
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中图分类号：
R5 [内科学];
学科分类号：
1002 ; 100201 ;
摘要：
GaN films doped with Er were grown on (0001) sapphire substrates by radio-frequency plasma-assisted molecular beam epitaxy (MBE). The incorporation of Er into the GaN films was achieved in-situ by the use of an effusion cell. The incorporation of Er was found to be in the range of 6x 10(17) to 2x 10(20) cm(-3) corresponding to Er cell temperatures in the range from 900 to 1000 degreesC. The highest incorporation level that has been observed was 1 X 10(21) cm(-3). Luminescence in the visible (414, 538, 559, and 667 run) and near-infrared (1.00, 1.51, 1.54 and 1.55 mum) spectral regions was obtained at room temperature by electrical excitation.
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页码：64 / 69
页数：6
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