On-chip ESD protection design for automotive vacuum-fluorescent-display (VFD) driver IC to sustain high ESD stress

被引：5

作者：

Ker, Ming-Dou ^{[1
]}

Chang, Wei-Jen ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Nanoelect & Gigascae Syst Lab, Hsinchu 300, Taiwan

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2007年 / 7卷 / 03期

关键词：

electrostatic discharge (ESD); high-voltage p-type silicon-controlled rectifier (HVPSCR); human body model (HBM); machine model (MM); secondary breakdown current (It2); vacuum fluorescent display (VFD);

D O I：

10.1109/TDMR.2007.907423

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new electrostatic discharge (ESD) protection structure of high-voltage p-type silicon-controlled rectifier (HVPSCR) that is embedded into a high-voltage p-channel MOS (HVPMOS) device is proposed. to greatly improve the ESD robustness of the vacuum-fluorescent-display (VFD) driver IC for automotive electronics applications. By only adding the additional n+ diffusion into the drain region of HVPMOS, the transmission-line-pulsing-measured secondary breakdown current of the output driver has been greatly improved to be greater than 6 A in a 0.5-mu m high-voltage complementary MOS process. Such ESD-enhanced VFD driver IC, which can sustain human-body-model ESD stress of up to 8 W, has been in mass production for automotive applications in cars without the latchup problem. Moreover, with device widths of 500, 600, and 800 mu m, the machine-model ESD levels of the HVPSCR are as high as 1100, 1300, and 1900 V, respectively.

引用

页码：438 / 445

页数：8

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