High voltage tolerant on-chip ESD protection in low-voltage BiCMOS process

被引：0
|
作者：
Vashchenko, VA [1 ]
Kindt, W [1 ]
Hopper, P [1 ]
机构：
[1] Natl Semicond Corp, Santa Clara, CA 95052 USA
来源：
JOURNAL OF ELECTROSTATICS | 2006年 / 64卷 / 02期
关键词：
ESD; protection; dual direction; automotive; high voltage; semiconductors; BiCMOS;
D O I：
10.1016/j.elstat.2005.03.084
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A dual-direction ESD protection approach is applied to the problem of 60 V tolerant on-chip protection of the thin film resistors in automotive application circuits realized in 5 V BiCMOS process. A novel method for increasing the breakdown voltage of a blocked N-isolation layer is proposed and validated using process and device numerical simulation followed by experimental measurements. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码：104 / 111
页数：8
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