A low-voltage triggering SCR for ESD protection in a 0.35um SiGe BiCMOS process

被引：0

作者：

Liao Changjun ^{[1
]}

Cheng Hui ^{[2
]}

Liu Jizhi ^{[2
]}

Zhao Liu ^{[2
]}

Tian Rui ^{[2
]}

机构：

[1] Univ Elect Sci & Technol China, Sch Commun & Informat Engn, Chengdu 610054, Peoples R China

[2] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China

来源：

7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016 | 2016年

关键词：

Heterojunction bipolar transistor (HBT); Silicon Controlled Rectifier (SCR); Electrostatic Discharge (ESD); trigger voltage;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A Heterojunction bipolar transistor (HBT) trigger Silicon Controlled Rectifier (SCR) device in a 0.35um Silicon-germanium (SiGe) BiCMOS technology is proposed for Electrostatic Discharge (ESD) protection in this paper. The trigger voltage of the HBT trigger SCR (HTSCR) is decided by the collector-to-emitter breakdown voltage (DVcro) of the HBT structure in floating base configuration. Compared to the traditional MLSCRs, the trigger voltage of the fabricated HTSCR can reduce to less 50% of that of the MLSCR The operational mechanisms of the HTSCR is discussed, and the underlying physical mechanisms critical to the trigger voltage are demonstrated based on transmission line pulsing (TLP) measurement.

引用

页数：2

共 50 条

[1] Low-voltage triggering SCRs for ESD protection in a 0.35 μm SiGe BiCMOS process
Liu JiZhi
Zeng Yaohui
Liu Zhiwei
Zhao Jianming
Cheng Hui
Liu Nie
[J]. MICROELECTRONICS RELIABILITY, 2017, 73 : 122 - 128
[2] A Novel Dual-SCR ESD Protection Structure in 0.35-μm SiGe BiCMOS Process
Hou Fei
Liu Nie
Liu Jizhi
Liu Zhiwei
[J]. 7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016, 2016,
[3] A 1.25Gsps 0.35um SiGe BiCMOS track and hold circuit
Hu, Rongbin
Zhang, Xiaoying
[J]. MATERIALS PROCESSING AND MANUFACTURING III, PTS 1-4, 2013, 753-755 : 2475 - +
[4] Analysis of the electrical characteristics of SCR-based ESD Protection Device (PTSCR) in 0.13/0.18/0.35um process technology
Koo, Yong-Seo
[J]. IEICE ELECTRONICS EXPRESS, 2011, 8 (01): : 8 - 12
[5] A LOW-VOLTAGE TRIGGERING SCR FOR ON-CHIP ESD PROTECTION AT OUTPUT AND INPUT PADS
CHATTERJEE, A
POLGREEN, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (01) : 21 - 22
[6] High voltage tolerant on-chip ESD protection in low-voltage BiCMOS process
Vashchenko, VA
Kindt, W
Hopper, P
[J]. JOURNAL OF ELECTROSTATICS, 2006, 64 (02) : 104 - 111
[7] RC-SCR: A novel low-voltage ESD protection circuit with new triggering mechanism
Feng, H
Zhan, R
Wu, Q
Chen, G
Guan, X
Wang, AZ
[J]. APCCAS 2002: ASIA-PACIFIC CONFERENCE ON CIRCUITS AND SYSTEMS, VOL 2, PROCEEDINGS, 2002, : 97 - 100
[8] ESD protection of the high voltage tolerant pins in low-voltage BiCMOS processes
Vashchenko, VA
ter Beek, M
Kindt, W
Hopper, P
[J]. PROCEEDING OF THE 2004 BIPOLAR/BICMOS CIRCUITS AND TECHNOLOGY MEETING, 2004, : 277 - 280
[9] A novel low trigger voltage low leakage SCR for low-voltage ESD protection
Liu, Jizhi
Yang, Feilong
Liu, Yilin
[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2024, 39 (02)
[10] A Ku-band High-Isolation SPDT Switch in 0.35um SiGe BiCMOS Technology
Li, Wenju
Ma, Kaixue
Mou, Shouxian
[J]. 2016 INTERNATIONAL SYMPOSIUM ON INTEGRATED CIRCUITS (ISIC), 2016,

← 1 2 3 4 5 →