A low-voltage triggering SCR for ESD protection in a 0.35um SiGe BiCMOS process

被引：0
|
作者：
Liao Changjun [1 ]
Cheng Hui [2 ]
Liu Jizhi [2 ]
Zhao Liu [2 ]
Tian Rui [2 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Commun & Informat Engn, Chengdu 610054, Peoples R China
[2] Univ Elect Sci & Technol China, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China
来源：
7TH IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE (INEC) 2016 | 2016年
关键词：
Heterojunction bipolar transistor (HBT); Silicon Controlled Rectifier (SCR); Electrostatic Discharge (ESD); trigger voltage;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A Heterojunction bipolar transistor (HBT) trigger Silicon Controlled Rectifier (SCR) device in a 0.35um Silicon-germanium (SiGe) BiCMOS technology is proposed for Electrostatic Discharge (ESD) protection in this paper. The trigger voltage of the HBT trigger SCR (HTSCR) is decided by the collector-to-emitter breakdown voltage (DVcro) of the HBT structure in floating base configuration. Compared to the traditional MLSCRs, the trigger voltage of the fabricated HTSCR can reduce to less 50% of that of the MLSCR The operational mechanisms of the HTSCR is discussed, and the underlying physical mechanisms critical to the trigger voltage are demonstrated based on transmission line pulsing (TLP) measurement.
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页数：2
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