Analytical modeling of gate-all-around junctionless transistor based biosensors for detection of neutral biomolecule species

被引:61
|
作者
Pratap, Yogesh [1 ]
Kumar, Manoj [2 ]
Kabra, Sneha [1 ]
Haldar, Subhasis [3 ]
Gupta, R. S. [4 ]
Gupta, Mridula [2 ]
机构
[1] Univ Delhi, Shaheed Rajguru Coll Appl Sci Women, Dept Instrumentat, New Delhi 110096, India
[2] Univ Delhi, Dept Elect Sci, Semicond Device Res Lab, South Campus, New Delhi 110021, India
[3] Univ Delhi, Motilal Nehru Coll, New Delhi 110021, India
[4] Maharaja Agrasen Inst Technol, Dept Elect & Commun Engn, New Delhi 110086, India
关键词
Sensor; Junctionless transistor (JLT); Biomolecule species; Protein; Gate-all-around (GAA); THRESHOLD VOLTAGE; MOSFET; PERFORMANCE; DEVICE; DESIGN;
D O I
10.1007/s10825-017-1041-4
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In recent times, FET-based sensors have been widely used in industrial and domestic applications due to their low cost and high sensitivity. In this paper, a nanogap-embedded gate-all-around junctionless transistor (GAA JLT) is proposed for label-free electrochemical detection of neutral biomolecule species such as Uricase, Protein, ChOx, APTES and Streptavidin. Shifts in subthreshold current, threshold voltage and capacitance are used to predict the response of the sensor. Impact of cavity width, cavity length, and gate length on the sensitivity of a junctionless transistor has also been investigated in detail. An analytical model has been developed for a GAA JLT-based biosensor. The results are compared with an inversion mode transistor-based biosensor using TCAD numerical simulation. The GAA JLT shows very high sensitivity due to the gate all around structure and bulk conduction mechanism.
引用
收藏
页码:288 / 296
页数:9
相关论文
共 50 条
  • [31] Analytical Current-Voltage Modeling and Analysis of the MFIS Gate-All-Around Transistor Featuring Negative-Capacitance
    Kim, Yeji
    Seon, Yoongeun
    Kim, Soowon
    Kim, Jongmin
    Bae, Saemin
    Yang, Inkyung
    Yoo, Changhyun
    Ham, Junghoon
    Hong, Jungmin
    Jeon, Jongwook
    ELECTRONICS, 2021, 10 (10)
  • [32] EFFECT OF GATE-ALL-AROUND TRANSISTOR GEOMETRY ON THE HIGH-FREQUENCY NOISE: ANALYTICAL DISCUSSION
    Benali, A.
    Traversa, F. L.
    Albareda, G.
    Alarcon, A.
    Aghoutane, M.
    Oriols, X.
    FLUCTUATION AND NOISE LETTERS, 2012, 11 (03):
  • [33] Compact Modeling of 3D Vertical Junctionless Gate-all-around Silicon Nanowire Transistors
    Mukherjee, Chhandak
    Larrieu, Guilhem
    Maneux, Cristell
    2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS), 2020,
  • [34] Modeling of gate leakage in cylindrical gate-all-around transistors
    Ravi Solanki
    Saniya Minase
    Ashutosh Mahajan
    Rajendra Patrikar
    Journal of Computational Electronics, 2021, 20 : 1694 - 1701
  • [35] Modeling of gate leakage in cylindrical gate-all-around transistors
    Solanki, Ravi
    Minase, Saniya
    Mahajan, Ashutosh
    Patrikar, Rajendra
    JOURNAL OF COMPUTATIONAL ELECTRONICS, 2021, 20 (05) : 1694 - 1701
  • [36] Sensitivity Investigation of Junctionless Gate-all-around Silicon Nanowire Field-Effect Transistor-Based Hydrogen Gas Sensor
    Rishu Chaujar
    Mekonnen Getnet Yirak
    Silicon, 2023, 15 : 609 - 621
  • [37] Sensitivity Investigation of Junctionless Gate-all-around Silicon Nanowire Field-Effect Transistor-Based Hydrogen Gas Sensor
    Chaujar, Rishu
    Yirak, Mekonnen Getnet
    SILICON, 2023, 15 (01) : 609 - 621
  • [38] Junctionless Gate-all-around Nanowire FET with Asymmetric Spacer for Continued Scaling
    V. Bharath Sreenivasulu
    Vadthiya Narendar
    Silicon, 2022, 14 : 7461 - 7471
  • [39] Analytical Compact Model of Nanowire Junctionless Gate-All-Around MOSFET Implemented in Verilog-A for Circuit Simulation
    Billel Smaani
    Shiromani Balmukund Rahi
    Samir Labiod
    Silicon, 2022, 14 : 10967 - 10976
  • [40] Analytical Compact Model of Nanowire Junctionless Gate-All-Around MOSFET Implemented in Verilog-A for Circuit Simulation
    Smaani, Billel
    Rahi, Shiromani Balmukund
    Labiod, Samir
    SILICON, 2022, 14 (16) : 10967 - 10976