Nonparabolicity effects in the bipolar quantum-well resonant-tunneling transistor

被引：4

作者：

Clark, KP ^{[1
]}

Kirk, WP ^{[1
]}

Seabaugh, AC ^{[1
]}

机构：

[1] TEXAS INSTRUMENTS INC, CORP RES & DEV, DALLAS, TX 75265 USA

来源：

PHYSICAL REVIEW B | 1997年 / 55卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.55.7068

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A numerical calculation of quantum-well resonant electron-state energies in the bipolar quantum-well resonant-tunneling transistor (BiQuaRTT) is compared with experimental results. From the multiple-peak resonant-tunneling characteristics, the energies of resonant quasibound states of the BiQuaRTT's triangular quantum well are determined. The electron-state energies can be over 1 eV above the conduction-band edge, and are strongly influenced by conduction-band nonparabolicity, producing nearly equally spaced resonances in the BiQuaRTT.

引用

页码：7068 / 7072

页数：5

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