RESONANT TRANSMISSION IN THE BASE COLLECTOR JUNCTION OF A BIPOLAR QUANTUM-WELL RESONANT-TUNNELING TRANSISTOR

A new transistor effect is demonstrated in a 120 nm base, bipolar quantum-well, resonant-tunneling transistor (BiQuaRTT). In this BiQuaRTT, a strong, multiple negative differential resistance (NDR) characteristic is obtained at room temperature with high-current gain (> 50). The effect is shown to be the consequence of an asymmetric, quantum-well-base heterostructure whose shape is controlled by the base/collector bias. Changes in the quantum-well shape lead to large modulations of the transmission coefficient for quasi-thermalized minority electrons crossing the quantum-well base. In this letter, we describe the transport characteristics of these transistors, including also temperature and magnetic field dependence.