PSEUDOMORPHIC BIPOLAR QUANTUM RESONANT-TUNNELING TRANSISTOR

被引：22
|
作者：
SEABAUGH, AC [1 ]
FRENSLEY, WR [1 ]
RANDALL, JN [1 ]
REED, MA [1 ]
FARRINGTON, DL [1 ]
MATYI, RJ [1 ]
机构：
[1] NAT BUR STANDARDS,WASHINGTON,DC
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 10期
关键词：
D O I：
10.1109/16.40918
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2328 / 2334
页数：7
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