DIRECT CREATION OF QUANTUM-WELL EXCITONS BY ELECTRON RESONANT-TUNNELING

被引：31

作者：

CAO, H ^{[1
]}

KLIMOVITCH, G ^{[1
]}

BJORK, G ^{[1
]}

YAMAMOTO, Y ^{[1
]}

机构：

[1] NIPPON TELEGRAPH & TEL PUBL CORP, BASIC RES LABS, ATSUGI, KANAGAWA, JAPAN

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 75卷 / 06期

关键词：

D O I：

10.1103/PhysRevLett.75.1146

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We have demonstrated a new tunneling process: the direct creation of GaAs quantum well excitons through electron resonant tunneling. The two-particle nature of such a tunneling process makes it different from the ordinary one-particle (electron, hole, or exciton) tunneling process in resonant tunneling conditions and results in different I-V characteristics. This resonant tunneling process may open a door toward electrically pumped excitonic cavity quantum electrodynamics and optoelectronic devices.

引用

页码：1146 / 1149

页数：4

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[1] THEORY OF DIRECT CREATION OF QUANTUM-WELL EXCITONS BY HOLE-ASSISTED ELECTRON RESONANT-TUNNELING
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