PROPERTIES OF MONOLITHIC INTEGRATION OF A RESONANT-TUNNELING DIODE AND A QUANTUM-WELL LASER

被引：0
|
作者：
SHENG, HY
CHUA, SJ
机构：
[1] Department of Electrical Engineering, National University of Singapore, Singapore 0511
来源：
SUPERLATTICES AND MICROSTRUCTURES | 1994年 / 16卷 / 02期
关键词：
D O I：
10.1006/spmi.1994.1130
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
An investigation of the electrical and optical characteristics of a resonant tunneling diode monolithically integrated with a quantum well laser is carried out. An analytic expression for the propagating model current is given in terms of the total spontaneous emission rate. The laser is pumped by the current emitted by the resonant tunneling diode. When the current in the laser exceeds the threshold current, laser light is produced. Since the current in the laser exhibits negative differential resistance similar in behavior to the current of a resonant tunneling diode, a bistable light output can be obtained from this new device.
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页码：157 / 160
页数：4
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