MONOLITHIC INTEGRATION OF A RESONANT TUNNELING DIODE AND A QUANTUM-WELL SEMICONDUCTOR-LASER

被引：18

作者：

GRAVE, I

KAN, SC

GRIFFEL, G

WU, SW

SAAR, A

YARIV, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1991年 / 58卷 / 02期

关键词：

D O I：

10.1063/1.104970

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

引用

页码：110 / 112

页数：3

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