Nonparabolicity effects in the bipolar quantum-well resonant-tunneling transistor

被引：4
|
作者：
Clark, KP [1 ]
Kirk, WP [1 ]
Seabaugh, AC [1 ]
机构：
[1] TEXAS INSTRUMENTS INC, CORP RES & DEV, DALLAS, TX 75265 USA
来源：
PHYSICAL REVIEW B | 1997年 / 55卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.55.7068
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A numerical calculation of quantum-well resonant electron-state energies in the bipolar quantum-well resonant-tunneling transistor (BiQuaRTT) is compared with experimental results. From the multiple-peak resonant-tunneling characteristics, the energies of resonant quasibound states of the BiQuaRTT's triangular quantum well are determined. The electron-state energies can be over 1 eV above the conduction-band edge, and are strongly influenced by conduction-band nonparabolicity, producing nearly equally spaced resonances in the BiQuaRTT.
引用
收藏
页码：7068 / 7072
页数：5
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