Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density

被引：6
|
作者：
Kita, Koji [1 ,2 ]
Kikuchi, Richard Heihachiro [1 ]
Hirai, Hirohisa [1 ]
Fujino, Yuki [1 ]
机构：
[1] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan
[2] Japan Sci & Technol Agcy JST, JST PRESTO, Tokyo, Japan
来源：
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 12 | 2014年 / 64卷 / 08期
关键词：
SILICON-CARBIDE; KINETICS; OXYGEN; FACE; SIO2;
D O I：
10.1149/06408.0023ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We fabricated SiO2/4H-SiC (0001) MOS capacitors with nearly-ideal capacitance-voltage characteristics, simply by the control of thermal oxidation conditions which were selected based on thermodynamic and kinetic considerations of SiC oxidation. The interface with low interface defect state density <10(11) cm(-2)eV(-1) for the energy range 0.1 - 0.4 eV below the conduction band of SiC was obtained by thermal oxidation at 1300 degrees C in a ramp-heating furnace with a short rise/fall time, followed by low temperature O-2 anneal at 800 degrees C.
引用
收藏
页码：23 / 28
页数：6
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