Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density

被引：6
|
作者：
Kita, Koji [1 ,2 ]
Kikuchi, Richard Heihachiro [1 ]
Hirai, Hirohisa [1 ]
Fujino, Yuki [1 ]
机构：
[1] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan
[2] Japan Sci & Technol Agcy JST, JST PRESTO, Tokyo, Japan
来源：
SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 12 | 2014年 / 64卷 / 08期
关键词：
SILICON-CARBIDE; KINETICS; OXYGEN; FACE; SIO2;
D O I：
10.1149/06408.0023ecst
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
We fabricated SiO2/4H-SiC (0001) MOS capacitors with nearly-ideal capacitance-voltage characteristics, simply by the control of thermal oxidation conditions which were selected based on thermodynamic and kinetic considerations of SiC oxidation. The interface with low interface defect state density <10(11) cm(-2)eV(-1) for the energy range 0.1 - 0.4 eV below the conduction band of SiC was obtained by thermal oxidation at 1300 degrees C in a ramp-heating furnace with a short rise/fall time, followed by low temperature O-2 anneal at 800 degrees C.
引用
收藏
页码：23 / 28
页数：6
相关论文
共 50 条
  • [31] Interface reactivity of Pr and SiO2 at 4H-SiC(0001)
    Schmeisser, D
    Lupina, G
    Muessig, H
    MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2005, 118 (1-3): : 19 - 22
  • [32] A photoemission study of 4H-SiC(0001)
    Johansson, LI
    Owman, F
    Martensson, P
    SURFACE SCIENCE, 1996, 360 (1-3) : L483 - L488
  • [33] Photoemission study of 4H-SiC(0001)
    Linkoping Univ, Linkoping, Sweden
    Surface Science, 1996, 360 (1-3):
  • [34] Effects of nitrogenmonoxide on 4H-SiC(0001)
    Virojanadara, C
    Johansson, LI
    SURFACE SCIENCE, 2003, 530 (1-2) : 17 - 25
  • [35] Atomic oxidation of large area epitaxial graphene on 4H-SiC(0001)
    Velez-Fort, E.
    Ouerghi, A.
    Silly, M. G.
    Eddrief, M.
    Shukla, A.
    Sirtti, F.
    Marangolo, M.
    APPLIED PHYSICS LETTERS, 2014, 104 (09)
  • [36] Density functional theory calculation for carrier scattering at 4H-SiC(0001)/SiO2 interface
    Yokota, Kazuma
    Funaki, Nahoto
    Ohmoto, Mizuho
    Uemoto, Mitsuharu
    Ono, Tomoya
    2023 INTERNATIONAL CONFERENCE ON SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES, SISPAD, 2023, : 293 - 296
  • [37] Density functional theory calculation for carrier scattering at 4H-SiC(0001)/SiO2 interface
    Yokota, Kazuma
    Funaki, Nahoto
    Uemoto, Mitsuharu
    Ohmoto, Mizuho
    Ono, Tomoya
    International Conference on Simulation of Semiconductor Processes and Devices, SISPAD, 2023, : 293 - 296
  • [38] Ultrasonic-assisted anodic oxidation of 4H-SiC (0001) surface
    Yang, Xiaozhe
    Yang, Xu
    Kawai, Kentaro
    Arima, Kenta
    Yamamura, Kazuya
    ELECTROCHEMISTRY COMMUNICATIONS, 2019, 100 : 1 - 5
  • [39] Spectroscopic Observation of the Interface States at the SiO2/4H-SiC(0001) Interface
    Yamashita, Yoshiyuki
    Nagata, Takahiro
    Chikyow, Toyohiro
    Hasunuma, Ryu
    Yamabe, Kikuo
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2019, 17 : 56 - 60
  • [40] Noise and Interface Density of Traps in 4H-SiC MOSFETs
    Rumyantsev, S. L.
    Levinshtein, M. E.
    Ivanov, P. A.
    Shur, M. S.
    Palmour, J. W.
    Agarwal, A. K.
    Hull, B. A.
    Ryu, S. H.
    NOISE AND FLUCTUATIONS, 2009, 1129 : 341 - +
12345