Control of 4H-SiC (0001) Thermal Oxidation Process for Reduction of Interface State Density

被引：6

作者：

Kita, Koji ^{[1
,2
]}

Kikuchi, Richard Heihachiro ^{[1
]}

Hirai, Hirohisa ^{[1
]}

Fujino, Yuki ^{[1
]}

机构：

[1] Univ Tokyo, Dept Mat Engn, Tokyo 1138656, Japan

[2] Japan Sci & Technol Agcy JST, JST PRESTO, Tokyo, Japan

来源：

SEMICONDUCTORS, DIELECTRICS, AND METALS FOR NANOELECTRONICS 12 | 2014年 / 64卷 / 08期

关键词：

SILICON-CARBIDE; KINETICS; OXYGEN; FACE; SIO2;

D O I：

10.1149/06408.0023ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

We fabricated SiO2/4H-SiC (0001) MOS capacitors with nearly-ideal capacitance-voltage characteristics, simply by the control of thermal oxidation conditions which were selected based on thermodynamic and kinetic considerations of SiC oxidation. The interface with low interface defect state density <10(11) cm(-2)eV(-1) for the energy range 0.1 - 0.4 eV below the conduction band of SiC was obtained by thermal oxidation at 1300 degrees C in a ramp-heating furnace with a short rise/fall time, followed by low temperature O-2 anneal at 800 degrees C.

引用

页码：23 / 28

页数：6

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