Angle-resolved photoelectron spectroscopy study of initial stage of thermal oxidation on 4H-SiC(0001)

被引：5
|
作者：
Arai, Hitoshi [1 ]
Nohira, Hiroshi [1 ,2 ]
机构：
[1] Tokyo City Univ, Grad Sch Engn, Dept Elect & Engn, Setagaya Ku, Tokyo 1588557, Japan
[2] Tokyo City Univ, Dept Elect & Elect Engn, Fac Engn, Setagaya Ku, Tokyo 1588557, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2016年 / 55卷 / 04期
关键词：
CARBIDE INTERFACE;
D O I：
10.7567/JJAP.55.04EB04
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A key to improving the performance of SiC MOSFETs is to clarify the SiO2/SiC interface structure formed by thermal oxidation. We have investigated the initial stage of thermal oxidation on 4H-SiC(0001) by angle-resolved photoelectron spectroscopy. From the changes in the Si 2p(3/2) and C 1s photoelectron spectra, the changes in the chemical bonding state of the SiO2/SiC structure with the progress of thermal oxidation were observed. We also found that the intensity of C-O bonds in the case of 4H-SiC(0001) was smaller than that in the case of 4H-SiC(0001) with the same oxide thickness and that the oxidation rate of 4H-SiC(0001) is already slower than that of 4H-SiC(0001) in the early stage of oxidation. (C) 2016 The Japan Society of Applied Physics
引用
收藏
页数：5
相关论文
共 50 条
  • [1] Angle-Resolved Photoelectron Spectroscopy Studies of Initial Stage of Thermal Oxidation on 4H-SiC (0001) on-Axis and 4° Off-Axis Substrates
    Arai, Hitoshi
    Toyoda, Ryoma
    Ishohashi, Ai
    Sano, Yasuhisa
    Nohira, Hiroshi
    WIDE BANDGAP SEMICONDUCTOR MATERIALS AND DEVICES 18, 2017, 77 (06): : 51 - 57
  • [2] Angle-resolved Photoelectron Spectroscopy studies of initial stage of oxidation on C-face 4H-SiC
    Sasago, T.
    Yamahori, S.
    Nohira, H.
    GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4, 2014, 64 (07): : 245 - 252
  • [3] Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC
    Chang, Ying
    Xiao, Aixia
    Li, Rubing
    Wang, Miaojing
    He, Saisai
    Sun, Mingyuan
    Wang, Lizhong
    Qu, Chuanyong
    Qiu, Wei
    CRYSTALS, 2021, 11 (06):
  • [4] Electronic structure of ZnO(0001) studied by angle-resolved photoelectron spectroscopy
    Girard, RT
    Tjernberg, O
    Chiaia, G
    Soderholm, S
    Karlsson, UO
    Wigren, C
    Nylen, H
    Lindau, I
    SURFACE SCIENCE, 1997, 373 (2-3) : 409 - 417
  • [5] AFM observation of initial oxidation stage of 4H-SiC (0001) in electrochemical mechanical polishing
    Yang, Xu
    Ohkubo, Yuji
    Endo, Katsuyoshi
    Yamamura, Kazuya
    19TH CIRP CONFERENCE ON ELECTRO PHYSICAL AND CHEMICAL MACHINING, 2018, 68 : 746 - 751
  • [6] Oxidation studies of 4H-SiC(0001) and (0001)
    Virojanadara, C
    Johansson, LI
    SURFACE SCIENCE, 2002, 505 (1-3) : 358 - 366
  • [7] Oxidation of Cu on ZnO(0001)-Zn: Angle-resolved photoelectron spectroscopy and low-energy electron diffraction study
    Ozawa, Kenichi
    Oba, Yukako
    Edamoto, Kazuyuki
    e-Journal of Surface Science and Nanotechnology, 2008, 6 : 226 - 232
  • [8] Oxidation of Cu on ZnO(0001)-Zn: Angle-Resolved Photoelectron Spectroscopy and Low-Energy Electron Diffraction Study
    Ozawa, Kenichi
    Oba, Yukako
    Edamoto, Kazuyuki
    E-JOURNAL OF SURFACE SCIENCE AND NANOTECHNOLOGY, 2008, 6 : 226 - 232
  • [9] Angle-resolved photoelectron spectroscopy study of the GaN(0001)-2x2 surface
    Lorenz, P.
    Gutt, R.
    Himmerlich, M.
    Schaefer, J. A.
    Krischok, S.
    PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 7, NO 7-8, 2010, 7 (7-8):
  • [10] Initial stages of thermal oxidation of 4H-SiC(11(2)over-bar0) studied by photoelectron spectroscopy
    Seyller, T
    Emtsev, KV
    Graupner, R
    Ley, L
    SILICON CARBIDE AND RELATED MATERIALS 2003, PTS 1 AND 2, 2004, 457-460 : 1317 - 1320
12345