Angle-Resolved Intensity of Polarized Micro-Raman Spectroscopy for 4H-SiC

被引：12

作者：

Chang, Ying ^{[1
]}

Xiao, Aixia ^{[1
]}

Li, Rubing ^{[1
]}

Wang, Miaojing ^{[1
]}

He, Saisai ^{[1
]}

Sun, Mingyuan ^{[1
]}

Wang, Lizhong ^{[2
]}

Qu, Chuanyong ^{[1
]}

Qiu, Wei ^{[1
]}

机构：

[1] Tianjin Univ, Sch Mech Engn, Tianjin Key Lab Modern Engn Mech, Tianjin 300072, Peoples R China

[2] Semicore Crystal Co Ltd, Mkt Sect, Taiyuan 030028, Peoples R China

来源：

CRYSTALS | 2021年 / 11卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Raman intensity; angle-resolved Raman; polarization Raman; uniaxial crystal 4H-SiC; GRAPHENE;

D O I：

10.3390/cryst11060626

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Raman spectroscopy is an indispensable method for the nondestructive testing of semiconductor materials and their microstructures. This paper presents a study on the angle-resolved intensity of polarized micro-Raman spectroscopy for a 4H silicon carbide (4H-SiC) wafer. A generalized theoretical model of polarized Raman intensity was established by considering the birefringence effect. The distributions of angle-resolved Raman intensities were achieved under normal and oblique backscattering configurations. Experiments were performed on a self-built angle-resolved Raman system, which verified the validity of the proposed model and achieved the identification of crystal orientations of the 4H-SiC sample.

引用

页数：13

共 50 条

[1] Angle-Resolved Intensity of In-Axis/Off-Axis Polarized Micro-Raman Spectroscopy for Monocrystalline Silicon
Chang, Ying
He, Saisai
Sun, Mingyuan
Xiao, Aixia
Zhao, Jiaxin
Ma, Lulu
Qiu, Wei
JOURNAL OF SPECTROSCOPY, 2021, 2021
[2] Micro-Raman spectroscopy of graphene grown on stepped 4H-SiC (0001) surface
Grodecki, K.
Bozek, R.
Strupinski, W.
Wysmolek, A.
Stepniewski, R.
Baranowski, J. M.
APPLIED PHYSICS LETTERS, 2012, 100 (26)
[3] Micro-Raman characterization of 4H-SiC stacking faults
Piluso, N.
Camarda, M.
Anzalone, R.
La Via, F.
SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 2014, 778-780 : 378 - 381
[4] Micro-raman investigation of defects in a 4H-SiC homoepilayer
Liu, X. F.
Sun, G. S.
Li, J. M.
Zhao, Y. M.
Li, J. Y.
Wang, L.
Zhao, W. S.
Luo, M. C.
Zeng, Y. P.
SILICON CARBIDE AND RELATED MATERIALS 2006, 2007, 556-557 : 387 - +
[5] Micro-Raman characterization of 4H-SiC stacking faults
20141217488076
(1) IMM-CNR, Z.I. VIII Strada, 5, 95121, Catania, Italy, 1600, Cree Inc.; et al; Mitsubishi Electric Corporation; Research Institute for Applied Sciences; The Japan Society of Applied Physics; Tokyo Electron Limited (Trans Tech Publications Ltd): : 778 - 780
[6] Angle-resolved photoelectron spectroscopy study of initial stage of thermal oxidation on 4H-SiC(0001)
Arai, Hitoshi
Nohira, Hiroshi
JAPANESE JOURNAL OF APPLIED PHYSICS, 2016, 55 (04)
[7] Structures of comets in a homoepitaxially grown 4H-SiC film studied by DUV micro-Raman spectroscopy
Tomita, Takuro
Matsuo, Shigeki
Okada, Tatsuya
Kimoto, Tsunenobu
Mitani, Takeshi
Nakashima, Shin-ichi
Silicon Carbide and Related Materials 2005, Pts 1 and 2, 2006, 527-529 : 339 - 342
[8] Micro-Raman imaging on 4H-SiC in contact with the electrode at room temperature
Suda, Jun
Suwa, Satoshi
Mizuno, Shugo
Togo, Kouki
Mastuo, Yuya
SPECTROCHIMICA ACTA PART A-MOLECULAR AND BIOMOLECULAR SPECTROSCOPY, 2018, 193 : 393 - 396
[9] Characterisation of 4H-SiC pin diodes by micro-Raman scattering and photoemission
Thuaire, A
Mermoux, M
Crisci, A
Camara, N
Bano, E
Baillet, F
Pernot, E
SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 : 437 - 440
[10] Angle-resolved Photoelectron Spectroscopy studies of initial stage of oxidation on C-face 4H-SiC
Sasago, T.
Yamahori, S.
Nohira, H.
GALLIUM NITRIDE AND SILICON CARBIDE POWER TECHNOLOGIES 4, 2014, 64 (07): : 245 - 252

← 1 2 3 4 5 →