Characterisation of 4H-SiC pin diodes by micro-Raman scattering and photoemission

被引：1
|
作者：
Thuaire, A
Mermoux, M
Crisci, A
Camara, N
Bano, E
Baillet, F
Pernot, E
机构：
[1] Ecole Natl Super Electrochim & Electrome Grenoble, LEMPI, F-38402 St Martin Dheres, France
[2] ENSERG, IMEP, F-38016 Grenoble, France
[3] Ecole Natl Super Electrochim & Electrome Grenoble, LTPCM, F-38402 St Martin Dheres, France
[4] Ecole Natl Super Phys Grenoble, LMGP, F-38402 St Martin Dheres, France
[5] FORTH, Iraklion 71110, Greece
来源：
SILICON CARBIDE AND RELATED MATERIALS 2004 | 2005年 / 483卷
关键词：
silicon carbide; PIN diode; structural defects; Raman imaging; electroluminescence;
D O I：
10.4028/www.scientific.net/MSF.483-485.437
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Structural defects in SiC crystals were investigated and 4H-SiC pin devices were characterized by micro-Raman scattering and photoemission. With the experimental set-up presented, defects could be successfully detected in SiC crystals but stacking faults could not be detected with micro-Raman scattering, although they could be detected by photoemission. Residual stress could be evaluated in 4H-SiC devices, as well as the temperature increase associated with the devices powering. A good correlation was found between the characterization techniques used: micro-Raman scattering and photoemission.
引用
收藏
页码：437 / 440
页数：4
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