Room temperature single-hole silicon memory

被引：0

作者：

Bagraev, NT ^{[1
]}

Bouravleuv, AD ^{[1
]}

Klyachkin, LE ^{[1
]}

Malyarenko, AM ^{[1
]}

Rykov, SA ^{[1
]}

机构：

[1] AF Ioffe Physicotech Inst, St Petersburg 194021, Russia

来源：

PHYSICS OF LOW-DIMENSIONAL STRUCTURES | 2000年 / 9-10卷

关键词：

D O I：

暂无

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the observation of room temperature operation demonstrated by a single-hole silicon memory cell in which the single-hole silicon transistor is used as an electrometer. This memory cell is realized on the basis of the quantum wire and the quantum dot which are self-assembly formed as a. multiple-tunnel junction by short-time diffusion of boron into the Si(100)-wafer. The single-hole device obtained exhibits the Coulomb oscillations and the memory effects such as the hysteresis in C-V characteristics which are respectively revealed by varying the gate and drain-source voltage in the process of the local tunneling spectroscopy measurements.

引用

页码：51 / 59

页数：9

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