Room temperature single-hole silicon memory

We report the observation of room temperature operation demonstrated by a single-hole silicon memory cell in which the single-hole silicon transistor is used as an electrometer. This memory cell is realized on the basis of the quantum wire and the quantum dot which are self-assembly formed as a. multiple-tunnel junction by short-time diffusion of boron into the Si(100)-wafer. The single-hole device obtained exhibits the Coulomb oscillations and the memory effects such as the hysteresis in C-V characteristics which are respectively revealed by varying the gate and drain-source voltage in the process of the local tunneling spectroscopy measurements.