Spin-dependent single-hole tunneling in self-assembled silicon quantum rings

被引：3
|
作者：
Bagraev, NT
Bouravleuv, AD
Gehlhoff, W
Ivanov, VK
Klyachkin, LE
Malyarenko, AM
Rykov, SA
Shelykh, IA
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
[2] Tech Univ Berlin, Inst Festkorperphys, D-1000 Berlin, Germany
来源：
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2002年 / 13卷 / 2-4期
关键词：
weak localisation; negative magnetic resistance; quantum conductance;
D O I：
10.1016/S1386-9477(02)00278-3
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
We study the quantum conductance revealed by the quantum wire embedded within one of the arms of the Aharonov-Bohm (AB) ring that exhibits a weak localisation regime. The AB ring is prepared inside self-assembled silicon quantum well of the p-type between 6-barriers on the n-type Si(1 0 0) surface. The coherence of the single-hole transport and negative magnetic resistance effect is demonstrated. The positive/negative transformation of the magnetoresistance is found by the electrically detected NMR of the Si-29 nuclei in the weakest magnetic fields, which seems to be caused by the effect of the nuclear spin polarisation on a weak antilocalisation. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：765 / 768
页数：4
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