Single-electron spin-dependent transport in split-gate structures containing self-assembled quantum dots

被引：0
|
作者：
E. E. Vdovin
Yu. N. Khanin
P. L. Shabelnikova
L. Eaves
M. Henini
机构：
[1] Russian Academy of Sciences,Institute of Microelectronics Technology and High Purity Materials
[2] University of Nottingham,School of Physics and Astronomy
来源：
Bulletin of the Russian Academy of Sciences: Physics | 2007年 / 71卷 / 8期
关键词：
Gate Voltage; Negative Differential Conductivity; Transistor Channel; Drain Voltage Versus; Coulomb Oscillation;
D O I：
10.3103/S1062873807080229
中图分类号：
学科分类号：
摘要：
Study of split-gate structures, in which self-assembled InAs quantum dots (QDs) are located near the region of 2D electron gas, has revealed Coulomb oscillations in the dependence of the tunnel current through a limited number of InAs QDs in a channel on the gate voltage, which correspond to the excited states of QDs with opposite spins. The Coulomb oscillations of the current were observed up to a temperature of ∼20 K. The Coulomb energy ΔEC was found to be 12.5 meV, a value corresponding to the theoretical estimates for p states of QDs in our experimental structures.
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收藏
页码：1124 / 1126
页数：2
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