High temperature single-hole silicon transistors

We present the first findings of the quantized conductance, EPR-EDEPR and NMR techniques which reveal the spin-dependent confinement and quantization phenomena in the silicon quantum wires created by the electrostatic ordering of the self-assembly dipole boron (B+ - B-) centres. These C-3v symmetry dipole impurity centres are regularly arranged along the edges of self-assembly longitudinal and lateral quantum wells (LQW and LaQW) which are naturally formed in the p(+)-diffusion profile inside ultra-shallow silicon n(+)-p(+)-p and n(+)-p(+)-n structures. A negative magnetoresistance that is evidence of the spin-dependent weak localization in self-assembly quantum wells at low electric fields is studied. The presence of natural quantum-size contacts inside self-assembly quantum wells is exhibited using the quantized conductance technique in weak magnetic fields.