Silicon single-hole transistor with large Coulomb blockade oscillations and high voltage gain at room temperature

We propose a new approach for realizing single-electron and single-hole transistors with both large Coulomb blockade oscillations and high voltage gain at room temperature. A thin gate oxide is adopted to increase gate capacitance and ultra-narrow channel is formed to reduce source and drain capacitance. The fabricated single-hole transistor shows large Coulomb blockade oscillations with peak-to-valley-current-ratio of 32 and high voltage gain of as high as 4.7 at room temperature. This is the first demonstration of room-temperature operating single-hole transistor with high voltage gain. The inverter circuit gain is also calculated on the basis of the experimental results, and the gain exceeds unity.