TEM investigations of Si ion-implanted GaN

被引：0
|
作者：
Zou, J [1 ]
Cockayne, DJH [1 ]
Duan, XF [1 ]
Tan, HH [1 ]
Williams, JS [1 ]
Pearton, SJ [1 ]
Stall, SA [1 ]
机构：
[1] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia
来源：
ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2 | 1998年
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：481 / 482
页数：2
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