ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI

被引：23
|
作者：
DIETRICH, HB [1 ]
WEISENBERGER, WH [1 ]
COMAS, J [1 ]
机构：
[1] USN,RES LAB,WASHINGTON,DC 20375
来源：
APPLIED PHYSICS LETTERS | 1976年 / 28卷 / 04期
关键词：
D O I：
10.1063/1.88716
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：182 / 184
页数：3
相关论文
共 50 条
  • [1] EFFECTS OF AL FILMS ON ION-IMPLANTED SI
    LEE, DH
    HART, RR
    MARSH, OJ
    APPLIED PHYSICS LETTERS, 1972, 20 (02) : 73 - &
  • [2] ANOMALOUS BEHAVIOR OF ION-IMPLANTED GASB
    CALLEC, R
    FAVENNEC, PN
    SALVI, M
    LHARIDON, H
    GAUNEAU, M
    APPLIED PHYSICS LETTERS, 1991, 59 (15) : 1872 - 1874
  • [3] Nanomechanical properties of ion-implanted Si
    Nagy, P. M.
    Aranyi, D.
    Horvath, P.
    Peto, G.
    Kalman, E.
    SURFACE AND INTERFACE ANALYSIS, 2008, 40 (3-4) : 875 - 880
  • [4] ON ANOMALOUS CHANNELING EFFECTS IN ION-IMPLANTED SILICON
    MAZZONE, AM
    PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (05) : 235 - 238
  • [5] Interstitial defects in ion-implanted Si
    Kovacevic, I
    Borjanovic, V
    Pivac, B
    VACUUM, 2003, 71 (1-2) : 129 - 133
  • [6] EPR OF ION-IMPLANTED DONORS IN SI
    BROWER, KL
    BORDERS, JA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1970, 15 (03): : 267 - &
  • [7] DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED SI
    GRUSKA, B
    GOTZ, G
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1982, 59 (3-4): : 157 - 167
  • [8] DECHANNELING BY DISLOCATIONS IN ION-IMPLANTED AL
    PICRAUX, ST
    RIMINI, E
    FOTI, G
    CAMPISANO, SU
    PHYSICAL REVIEW B, 1978, 18 (05): : 2078 - 2096
  • [9] Picosecond photoresponse of carriers in Si ion-implanted Si
    Chin, A
    Lee, KY
    Lin, BC
    Horng, S
    APPLIED PHYSICS LETTERS, 1996, 69 (05) : 653 - 655
  • [10] Rapid migration of defects in ion-implanted silicon
    Lalita, J
    Pellegrino, P
    Hallen, A
    Svensson, BG
    DEFECTS AND DIFFUSION IN SILICON PROCESSING, 1997, 469 : 239 - 244
12345