ANOMALOUS MIGRATION OF ION-IMPLANTED AL IN SI

被引:23
|
作者
DIETRICH, HB [1 ]
WEISENBERGER, WH [1 ]
COMAS, J [1 ]
机构
[1] USN,RES LAB,WASHINGTON,DC 20375
关键词
D O I
10.1063/1.88716
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:182 / 184
页数:3
相关论文
共 50 条
  • [21] INTERSTITIAL TRAPPING IN ION-IMPLANTED AL(AG)
    KHUBEIS, I
    MEYER, O
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1989, 36 (03): : 340 - 344
  • [22] AMORPHIZATION OF ION-IMPLANTED AL-NI
    THOME, L
    PONS, F
    PIVIN, JC
    COHEN, C
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1986, 15 (1-6): : 269 - 271
  • [23] AMORPHIZATION PROCESSES IN ION-IMPLANTED SI ION SPECIES EFFECTS
    MOTOOKA, T
    HOLLAND, OW
    APPLIED PHYSICS LETTERS, 1992, 61 (25) : 3005 - 3007
  • [24] Migration kinetics of ion-implanted beryllium in glassy carbon
    Koskelo, O.
    Koester, U.
    Riihimaki, I.
    Raisanen, J.
    DIAMOND AND RELATED MATERIALS, 2008, 17 (12) : 1991 - 1993
  • [25] Migration kinetics of ion-implanted beryllium in ZnO and GaN
    Koskelo, O.
    Koester, U.
    Tuomisto, F.
    Helariutta, K.
    Sopanen, M.
    Suihkonen, S.
    Svensk, O.
    Raisanen, J.
    PHYSICA SCRIPTA, 2013, 88 (03)
  • [26] MIGRATION OF ION-IMPLANTED KRYPTON IN SILICON DURING ANNEAL
    WELCH, JD
    DAVIES, JA
    COBBOLD, RSC
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (11) : 4540 - 4543
  • [27] IMPLANTATION DAMAGE AND THE ANOMALOUS TRANSIENT DIFFUSION OF ION-IMPLANTED BORON
    MICHEL, AE
    RAUSCH, W
    RONSHEIM, PA
    APPLIED PHYSICS LETTERS, 1987, 51 (07) : 487 - 489
  • [28] RAPID ANNEALING AND THE ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON INTO SILICON
    MICHEL, AE
    RAUSCH, W
    RONSHEIM, PA
    KASTL, RH
    APPLIED PHYSICS LETTERS, 1987, 50 (07) : 416 - 418
  • [29] EFFECTS OF SILICON IMPLANTATION ON THE ANOMALOUS DIFFUSION OF ION-IMPLANTED BORON
    KWONG, DL
    CHUN, HG
    TSENG, HH
    YU, HY
    JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S26 - S27
  • [30] AN ANOMALOUS EFFECT IN ANGLE LAPPING AND STAINING ION-IMPLANTED LAYERS
    PICCO, P
    POLIGNANO, ML
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (09) : 2034 - 2036