Quantitative characterization of ion-implanted layers in Si

被引：3
|
作者：
Salnick, A [1 ]
Hovinen, M [1 ]
Chen, L [1 ]
Chu, H [1 ]
Opsal, J [1 ]
Rosenewaig, A [1 ]
机构：
[1] Therma Wave Inc, Fremont, CA 94539 USA
来源：
PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA: TENTH INTERNATIONAL CONFERENCE | 1999年 / 463卷
关键词：
D O I：
10.1063/1.58119
中图分类号：
R318 [生物医学工程];
学科分类号：
0831 ;
摘要：
A new approach to the issues of characterization of ion-implanted semiconductors using the thermal wave technology is presented. Experimental results obtained using a new multifrequency lateral-scanning system on a set of Si wafers implanted with Boron in the energy range of 0.2-5 keV and dose range 4.5x10(14) - 1.1x10(15) ions/cm(2) show that the sensitivity to dose and energy can be significantly increased by using the new system. The concept of quantitative depth profiling using the calculation of the photothermal response from the ion-implantation induced damaged layers in Si is also discussed.
引用
收藏
页码：497 / 499
页数：3
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