Surface- and microanalytical characterization of ion-implanted Si-C-N layers

被引：0

作者：

H. Klewe-Nebenius

M. Bruns

H. Lutz

H. Baumann

F. Link

K. Bethge

机构：

[1] Forschungszentrum Karlsruhe GmbH,

[2] Institut für Instrumentelle Analytik,undefined

[3] P.O.B. 3640,undefined

[4] D-76021 Karlsruhe,undefined

[5] Germany,undefined

[6] Universität Frankfurt/M.,undefined

[7] Institut für Kernphysik,undefined

[8] August-Euler-Strasse 6,undefined

[9] D-60486 Frankfurt/M.,undefined

[10] Germany,undefined

来源：

Fresenius' Journal of Analytical Chemistry | 1998年 / 361卷

关键词：

Depth Profile; Typical Sample; Production Method; Depth Distribution; Hard Coating;

D O I：

暂无

中图分类号：

学科分类号：

摘要：

The development of production methods for carbonitridic hard coatings needs information on depth distributions of the layer components as well as on stoichiometries and binding states of the layer constituents. Si-C-N samples were produced by implanting 13C- and 15N-ions into c-Si <111>, and the implanted layers were investigated by means of NRA depth profiling. Afterwards several samples were characterized by surface analytical techniques, and XPS- and AES depth profiles were measured for typical samples. The measurements confirm the NRA depth profiles and stoichiometries. Furthermore, in all depth ranges C 1s- and N 1s binding energies are observed which are consistent with those of carbonitrides.

引用

页码：630 / 633

页数：3

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