DAMAGE PROFILE DETERMINATION OF ION-IMPLANTED SI LAYERS BY ELLIPSOMETRY

被引：20
|
作者：
MOTOOKA, T
WATANABE, K
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 08期
关键词：
D O I：
10.1063/1.328231
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
下载
收藏
页码：4125 / 4129
页数：5
相关论文
共 50 条
  • [1] INVESTIGATION OF ION-IMPLANTED GAP LAYERS BY ELLIPSOMETRY
    DOBBS, BC
    ANDERSON, WJ
    PARK, YS
    JOURNAL OF APPLIED PHYSICS, 1977, 48 (12) : 5052 - 5056
  • [2] PHOTOACOUSTIC MONITORING OF DAMAGE IN ION-IMPLANTED AND ANNEALED SI LAYERS
    LUCIANI, L
    ZAMMIT, U
    MARINELLI, M
    PIZZOFERRATO, R
    SCUDIERI, F
    MARTELLUCCI, S
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (02): : 205 - 209
  • [3] OPTICAL-PROPERTIES OF ION-IMPLANTED SI LAYERS STUDIED BY SPECTROSCOPIC ELLIPSOMETRY
    ADACHI, S
    MATSUMURA, T
    SUZUKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4A): : 1931 - 1936
  • [4] OPTICAL-CONSTANTS DETERMINATION OF ION-IMPLANTED GAAS-LAYERS BY ELLIPSOMETRY
    KULIK, M
    ZUK, J
    ACTA PHYSICA POLONICA A, 1986, 69 (06) : 1141 - 1144
  • [5] Quantitative characterization of ion-implanted layers in Si
    Salnick, A
    Hovinen, M
    Chen, L
    Chu, H
    Opsal, J
    Rosenewaig, A
    PHOTOACOUSTIC AND PHOTOTHERMAL PHENOMENA: TENTH INTERNATIONAL CONFERENCE, 1999, 463 : 497 - 499
  • [6] DAMAGE AND REORDERING OF ION-IMPLANTED LAYERS OF INP
    KENNEDY, EF
    APPLIED PHYSICS LETTERS, 1981, 38 (05) : 375 - 377
  • [7] Spectroscopic ellipsometry study of ion-implanted Si(100) wafers
    Tsunoda, K
    Adachi, S
    Takahashi, M
    JOURNAL OF APPLIED PHYSICS, 2002, 91 (05) : 2936 - 2941
  • [8] Spectroscopic ellipsometry study of ion-implanted Si(100) wafers
    1600, American Institute of Physics Inc. (91):
  • [9] X-RAY DETERMINATION OF STRAIN AND DAMAGE DISTRIBUTIONS IN ION-IMPLANTED LAYERS
    SPERIOSU, VS
    GLASS, HL
    KOBAYASHI, T
    APPLIED PHYSICS LETTERS, 1979, 34 (09) : 539 - 542
  • [10] Spectroscopic ellipsometry study of buried graphitized layers in the ion-implanted diamond
    Khomich, AV
    Kovalev, VI
    Zavedeev, EV
    Khmelnitskiy, RA
    Gippius, AA
    VACUUM, 2005, 78 (2-4) : 583 - 587
12345