TEM investigations of Si ion-implanted GaN

被引：0
|
作者：
Zou, J [1 ]
Cockayne, DJH [1 ]
Duan, XF [1 ]
Tan, HH [1 ]
Williams, JS [1 ]
Pearton, SJ [1 ]
Stall, SA [1 ]
机构：
[1] Univ Sydney, Australian Key Ctr Microscopy & Microanal, Sydney, NSW 2006, Australia
来源：
ELECTRON MICROSCOPY 1998, VOL 3: MATERIALS SCIENCE 2 | 1998年
关键词：
D O I：
暂无
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
引用
收藏
页码：481 / 482
页数：2
相关论文
共 50 条
  • [31] MODEL FOR AMORPHIZATION PROCESSES IN ION-IMPLANTED SI
    MOTOOKA, T
    PHYSICAL REVIEW B, 1994, 49 (23): : 16367 - 16371
  • [32] Deep electronic states in ion-implanted Si
    J. H. Evans-Freeman
    D. Emiroglu
    M. A. Gad
    N. Mitromara
    K. D. Vernon-Parry
    Journal of Materials Science, 2006, 41 : 1007 - 1012
  • [33] HREM EXAMINATION OF ER ION-IMPLANTED IN SI
    YAN, Y
    LI, Q
    FENG, D
    WANG, P
    SUN, HL
    MATERIALS LETTERS, 1989, 7 (12) : 445 - 448
  • [34] Deep electronic states in ion-implanted Si
    Evans-Freeman, JH
    Emiroglu, D
    Gad, MA
    Mitromara, N
    Vernon-Parry, KD
    JOURNAL OF MATERIALS SCIENCE, 2006, 41 (03) : 1007 - 1012
  • [35] Magnetic and structural properties of Fe ion-implanted GaN
    Kim, Woochul
    Kang, Hee Jae
    Noh, Sam Kyu
    Song, Jonghan
    Kim, Chul Sung
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2007, 316 (02) : E199 - E202
  • [36] Migration kinetics of ion-implanted beryllium in ZnO and GaN
    Koskelo, O.
    Koester, U.
    Tuomisto, F.
    Helariutta, K.
    Sopanen, M.
    Suihkonen, S.
    Svensk, O.
    Raisanen, J.
    PHYSICA SCRIPTA, 2013, 88 (03)
  • [37] Magnetic and structural properties of Co ion-implanted GaN
    Kim, W
    Kang, HJ
    Oh, SK
    Shin, S
    Lee, JH
    Song, J
    Noh, SK
    Oh, SJ
    Kim, CS
    IEEE TRANSACTIONS ON NANOTECHNOLOGY, 2006, 5 (02) : 149 - 151
  • [38] Raman characterization of Ar+ ion-implanted GaN
    Boudart, B
    Guhel, Y
    Pesant, JC
    Dhamelincourt, P
    Poisson, MA
    JOURNAL OF RAMAN SPECTROSCOPY, 2002, 33 (04) : 283 - 286
  • [39] Raman scattering studies on hydrogen ion-implanted GaN
    Senthil Kumar, M.
    Kesavamoorthy, R.
    Magudapathy, P.
    Nair, K.G.M.
    Kumar, J.
    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 2001, 179 (02) : 193 - 199
  • [40] The structural and optical properties of metal ion-implanted GaN
    Mackova, A.
    Malinsky, P.
    Sofer, Z.
    Simek, P.
    Sedmidubsky, D.
    Vesely, M.
    Boettger, R.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2016, 371 : 254 - 257
12345