Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy

被引：14

作者：

Liu, Xiangquan ^{[1
,2
]}

Zheng, Jun ^{[1
,2
]}

Zhou, Lin ^{[1
,2
]}

Liu, Zhi ^{[1
,2
]}

Zuo, Yuhua ^{[1
,2
]}

Xue, Chunlai ^{[1
,2
]}

Cheng, Buwen ^{[1
,2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China

[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 785卷

基金：

北京市自然科学基金;

关键词：

Magnetron sputtering; Epitaxy; GePb alloy; Structural property; Si photonics; ALLOY;

D O I：

10.1016/j.jallcom.2019.01.163

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This paper reports the synthesis of single-crystalline GePb alloy films on a Ge(100) substrate by magnetron sputter epitaxy. The as-grown GePb alloy films possess high crystalline quality and no dislocations, as revealed by X-ray diffractometry, transmission electron microscopy. The Pb composition of the GePb alloy was about 0.4% at the growth temperature of 250 degrees C and it decreased with increasing substrate temperature up to 400 degrees C. The thermal stability of the GePb alloy was studied using Raman spectra and atomic force microscopy (AFM)results, and it was observed that Pb segregated from the GePb alloy above 400 degrees C. The successful growth of single-crystal GePb lays the foundation for future GePb device fabrication. (C) 2019 Elsevier B.V. All rights reserved.

引用

页码：228 / 231

页数：4

共 50 条

[1] Productions of Si and Ge thin film single crystalline growth by lateral grapho-epitaxy
Kawabe, T
Yokoyama, K
Koide, T
Ito, T
Minemoto, T
Takakura, H
Hamakawa, Y
[J]. PROCEEDINGS OF 3RD WORLD CONFERENCE ON PHOTOVOLTAIC ENERGY CONVERSION, VOLS A-C, 2003, : 1259 - 1261
[2] Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering
Otsuka, Shintaro
Mori, Takahiro
Morita, Yukinori
Uchida, Noriyuki
Liu, Yongxun
O'uchi, Shin-ichi
Fuketa, Hiroshi
Migita, Shinji
Masahara, Meishoku
Matsukawa, Takashi
[J]. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2017, 70 : 3 - 7
[3] Growth of Crystalline Ge1-xSnx Films on Si (100) by Magnetron Sputtering
Zheng, Jun
Li, Leliang
Zhou, Tianwei
Zuo, Yuhua
Li, Chuanbo
Cheng, Buwen
Wang, Qiming
[J]. ECS SOLID STATE LETTERS, 2014, 3 (09) : P111 - P113
[4] Single crystalline Si substrate growth by lateral diffusion epitaxy
Li, Bo
Yu, Hao Ling
Shen, Huaxiang
Kitai, Adrian
[J]. JOURNAL OF CRYSTAL GROWTH, 2013, 366 : 67 - 75
[5] Effect of Applied Substrate Bias on Growth of CdTe Film by RF Magnetron Sputtering
Li, Hui
Liu, Xiangxin
Huang, Fang
[J]. 2012 38TH IEEE PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC), 2012,
[6] Ge(Sn) growth on Si(001) by magnetron sputtering
Khelidj, H.
Portavoce, A.
Bertoglio, M.
Descoins, M.
Patout, L.
Hoummada, K.
Hallen, A.
Charai, A.
Benoudia, M. C.
Mangelinck, D.
[J]. MATERIALS TODAY COMMUNICATIONS, 2021, 26
[7] Simulation Method of Magnetron Sputtering Film Growth
Wang X.-Q.
Zhao J.
Liu J.-Y.
[J]. Surface Technology, 2022, 51 (02): : 156 - 164
[8] Single crystalline Ge thin film growth on c-plane sapphire substrates by molecular beam epitaxy (MBE)
Wangila, Emmanuel
Saha, Samir K.
Kumar, Rahul
Kuchuk, Andrian
Gunder, Calbi
Amoah, Sylvester
Khiangte, Krista R.
Chen, Zhong
Yu, Shui-Qing
Salamo, Gregory J.
[J]. CRYSTENGCOMM, 2022, 24 (24) : 4372 - 4380
[9] Diode laser annealing of epitaxy Ge on sapphire (0001) grown by magnetron sputtering
Liu, Ziheng
Hao, Xiaojing
Huang, Jialiang
Ho-Baillie, Anita
Varlamov, Sergey
Green, Martin A.
[J]. MATERIALS LETTERS, 2017, 208 : 35 - 38
[10] Single-crystalline GePb alloys formed by rapid thermal annealing-induced epitaxy
Yang Jiayin
Hu Huiyong
Miao Yuanhao
Wang Bin
Wang Wei
Su Han
Ma Yubo
[J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2020, 53 (26)

← 1 2 3 4 5 →