Growth of Crystalline Ge1-xSnx Films on Si (100) by Magnetron Sputtering

被引：29
|
作者：
Zheng, Jun [1 ]
Li, Leliang [1 ]
Zhou, Tianwei [1 ]
Zuo, Yuhua [1 ]
Li, Chuanbo [1 ]
Cheng, Buwen [1 ]
Wang, Qiming [1 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
来源：
ECS SOLID STATE LETTERS | 2014年 / 3卷 / 09期
基金：
中国国家自然科学基金;
关键词：
GESN; ALLOYS; GAP;
D O I：
10.1149/2.0081409ssl
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Crystalline Ge1-xSnx films were successfully grown on Si (100) substrates by low-temperature magnetron sputtering, using a Ge thin film as a buffer layer. The resulting films were revealed to have a high crystalline quality by X-ray diffraction and transmission electron microscopy. The thermal stability of these films was also studied in detail, demonstrating that sputtered films with a Sn composition 0.06 are stable at 500 degrees C. On the basis of these results, Ge1-xSnx films grown by sputtering appear to have great promise for the cost-effective fabrication of Si-based infrared devices. (C) 2014 The Electrochemical Society. All rights reserved.
引用
收藏
页码：P111 / P113
页数：3
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