Ge1-xSnx Alloys Pseudomorphically Grown on Ge (001) by Sputtering

被引：0

作者：

Ladron de Guevara, H. Perez ^{[1
]}

RodriGuez, A. G. ^{[2
]}

Navarro-Contreras, H. ^{[2
]}

Vidal, M. A. ^{[2
]}

机构：

[1] Univ Guadalajara, Ctr Univ Lagos, Av Enrique Diaz de Leon 1144, Lagos De Moreno 47460, Jalisco, Mexico

[2] UASLP, CIACYT, San Luis Potosi 78000, Mexico

来源：

SIGE, GE, AND RELATED COMPOUNDS 5: MATERIALS, PROCESSING, AND DEVICES | 2012年 / 50卷 / 09期

关键词：

SUBSTRATE; FILMS;

D O I：

10.1149/05009.0413ecst

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Ge1-xSnx alloys were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. sputtering system with two independents plasmas not simultaneous focus to substrate. We determined the in-plane and in-growth lattice parameters, as well as the alloy bulk lattice parameter of the alloys for different Sn concentrations by high resolution x-ray diffraction. At low concentrations, we observed that Ge1-xSnx layers have pseudomorphic characteristics. We also determine the band gap of these alloys from transmittance measurements at different temperatures, using a fast-Fourier-transform infrared interferometer. Our results show that the change from indirect to direct band gap it is observed to lie between 0.10< x(c) < 0.13.

引用

页码：413 / 417

页数：5

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