Growth of single crystalline GePb film on Ge substrate by magnetron sputtering epitaxy

被引：14
|
作者：
Liu, Xiangquan [1 ,2 ]
Zheng, Jun [1 ,2 ]
Zhou, Lin [1 ,2 ]
Liu, Zhi [1 ,2 ]
Zuo, Yuhua [1 ,2 ]
Xue, Chunlai [1 ,2 ]
Cheng, Buwen [1 ,2 ]
机构：
[1] Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China
[2] Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China
来源：
JOURNAL OF ALLOYS AND COMPOUNDS | 2019年 / 785卷
基金：
北京市自然科学基金;
关键词：
Magnetron sputtering; Epitaxy; GePb alloy; Structural property; Si photonics; ALLOY;
D O I：
10.1016/j.jallcom.2019.01.163
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
This paper reports the synthesis of single-crystalline GePb alloy films on a Ge(100) substrate by magnetron sputter epitaxy. The as-grown GePb alloy films possess high crystalline quality and no dislocations, as revealed by X-ray diffractometry, transmission electron microscopy. The Pb composition of the GePb alloy was about 0.4% at the growth temperature of 250 degrees C and it decreased with increasing substrate temperature up to 400 degrees C. The thermal stability of the GePb alloy was studied using Raman spectra and atomic force microscopy (AFM)results, and it was observed that Pb segregated from the GePb alloy above 400 degrees C. The successful growth of single-crystal GePb lays the foundation for future GePb device fabrication. (C) 2019 Elsevier B.V. All rights reserved.
引用
收藏
页码：228 / 231
页数：4
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