Simulation Method of Magnetron Sputtering Film Growth

The film prepared by magnetron sputtering technology is uniform and free from pores inside, with high density, good adhesion to the substrate and excellent quality and has been widely used in scientific research and industrial production. Such film is suitable for the simulation by computer to study sputtering process and sputtering results, which can not only check the accuracy of simulation, but also excavate the intrinsic meaning of experimental phenomena and provide reference information for subsequent experiments. Based on the introduction of the principles of the commonly used simulation methods for the growth of magnetron sputtering films, the applicable conditions and simulation results of the three methods, first-principles calculations, molecular dynamics (MD) and Monte Carlo (MC), were discussed in detail and the latest research progress at home and abroad was summarized and analyzed from the problems to be solved by the three methods and the differences between the three methods. It was found that the three methods were successively decreasing in accuracy and calculation amount, but increasing sequentially in the simulation time and space scales. For simulation object, first-principles calculations method is mostly used to simulate the properties of the film or the motion between particles due to high precision and the simulation results can be accurate to the value, so as to make more accurate predictions and guidance for the experiment. The molecular dynamics method is mostly used to simulate the film growth process and the behavior between atoms. Compared with the former two, the Monte Carlo method is more versatile and can simulate the film and the electromagnetic field. Finally, the future research direction of magnetron sputtering film growth simulation is forecasted. © 2022, Chongqing Wujiu Periodicals Press. All rights reserved.