Epitaxial growth of Ge thin film on Si (001) by DC magnetron sputtering

被引：5

作者：

Otsuka, Shintaro ^{[1
]}

Mori, Takahiro ^{[1
]}

Morita, Yukinori ^{[1
]}

Uchida, Noriyuki ^{[1
]}

Liu, Yongxun ^{[1
]}

O'uchi, Shin-ichi ^{[1
]}

Fuketa, Hiroshi ^{[1
]}

Migita, Shinji ^{[1
]}

Masahara, Meishoku ^{[1
]}

Matsukawa, Takashi ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Nanoelect Res Inst, 1-1-1 Umezono, Tsukuba, Ibaraki 3058568, Japan

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2017年 / 70卷

关键词：

Heteroepitaxial growth; Germanium; DC magnetron sputtering; FIELD-EFFECT TRANSISTORS; STRAIN RELAXATION; SI(100); SILICON; SURFACE; LAYERS;

D O I：

10.1016/j.mssp.2016.09.012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated that sub-10nm-thick heteroepitaxial Ge films on Si (001) having smooth surfaces can be obtained by DC magnetron sputtering. Ge films grown at 350 C preserve the smooth surfaces with a roughness root mean square (RMS) of 0.39 nm, whereas, the Ge films grown at 500 C show significant roughness with an island-like morphology. In samples grown at 350 C, it is confirmed that the Ge films are grown epitaxially by cross-section transmission electron microscopy (TEM) and X-ray diffraction (XRD) rocking curve measurements. Rapid thermal annealing (RTA) at 720 C is effective in improving the crystalline quality and the degradation in the roughness is negligible. Raman spectra and an XRD reciprocal space map reveal that the epitaxial Ge grown at 350 C show an in-plane compressive strain and that the strain continues to remain after a 72O degrees C RTA.

引用

页码：3 / 7

页数：5

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